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Minimizing sulfur contamination and rinse water volume required following a sulfuric acid/hydrogen peroxide clean by performing a chemically basic rinse

机译:通过化学碱性冲洗,在硫酸/过氧化氢清洁后,最大限度地减少硫污染和冲洗水量

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Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off wafer surfaces. Various rinsing conditions were tested and the resulting residual contamination on the wafer surface was measured. The addition of small amounts of a chemical base such as ammonium hydroxide to the rinse water has been found to be effective in reducing the surface concentration of sulfur and also mitigates the particle growth that occurs on SPM cleaned wafers. The volume of room temperature water required to rinse these wafers is also significantly reduced.

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