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首页> 美国政府科技报告 >Kidorui genso tenka sekigai hakko device zairyo ni kansuru kenkyu. (Study on the rare earth element doped infrared emission device materials).
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Kidorui genso tenka sekigai hakko device zairyo ni kansuru kenkyu. (Study on the rare earth element doped infrared emission device materials).

机译：Kidorui genso tenka sekigai hakko设备zairyo ni kansuru kenkyu。 （稀土元素掺杂红外发射器件材料的研究）。

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The infrared emission of rare earth element, erbium doped silicon semiconductor occurs at 1.54 (mu)m, close to the minimum loss wavelength region of optical fibers. This semiconductor is expected as a new emission device material. To clarify the mechanism for enhancing the erbium emission intensity, the atomic structure and photoluminescence (PL) property of this material were investigated. A series of specimens with different erbium concentrations and another series of specimens with a constant erbium concentration and different oxygen atom concentrations were prepared by means of the ion-implantation which can control the doping quantity precisely, to measure the PL properties of them. PL was not observed by doping erbium only. The co-doping of oxygen atoms was necessary, and the highest intensity was achieved when the oxygen concentration was ten times as great as that of erbium. Specimens were also prepared by means of the laser doping by which macro-defects of substrate are difficult to be introduced. A correlation was examined between the distribution of PL centers in the direction of depth and the distribution of doped erbium atoms. The erbium atoms formed multiple PL centers, and the shape of PL centers was different between the surface and the inside of specimens. It was also found that the distribution of erbium atoms corresponds to that of the PL intensity. 19 refs., 32 figs., 3 tabs.

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