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Neutron transmutation doped (Ntd) germanium thermistors for sub-Mm bolometer applications

机译:用于亚毫米测辐射热计应用的中子嬗变掺杂(Ntd)锗热敏电阻

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The authors report on recent advances in the development of Neutron Transmutation Doped (NTD) semiconductor thermistors fabricated from germanium of natural and controlled isotopic composition. The near ideal doping uniformity which can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor (FET) preamplifiers have led to the widespread acceptance of these thermal sensors in many radiotelescopes operating on the ground, on high altitude aircraft and on spaceborne satellites. These features also have made possible the development of efficient bolometer arrays which are beginning to produce exciting results.

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