Lightning Pin Injection Test: MOSFETS in 'ON' State

机译：避雷针注入测试：mOsFET处于“ON”状态

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The test objective was to evaluate MOSFETs for induced fault modes caused by pin-injecting a standard lightning waveform into them while operating. Lightning Pin-Injection testing was performed at NASA LaRC. Subsequent fault-mode and aging studies were performed by NASA ARC researchers using the Aging and Characterization Platform for semiconductor components. This report documents the test process and results, to provide a basis for subsequent lightning tests. The ultimate IVHM goal is to apply prognostic and health management algorithms using the features extracted during aging to allow calculation of expected remaining useful life. A survey of damage assessment techniques based upon inspection is provided, and includes data for optical microscope and X-ray inspection. Preliminary damage assessments based upon electrical parameters are also provided.

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Ely, J. J.; Nguyen, T. X.; Szatkowski, G. N.; Koppen, S. V.; Mielnik, J. J.; Vaughan, R. K.; Saha, S.; Wysocki, P. F.; Celaya, J. R.;
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年度 2011
页码 1-38
总页数 38
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
X ray inspection ; Damage assessment ; Lightning ; Metal oxide semiconductors ; Optical microscopes ; Waveforms ; Pins ; Injection;

机译：X射线检查;损伤评估;闪电;金属氧化物半导体;光学显微镜;波形;针脚;注射;

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专利

1. Impact Of Lateral Nonuniform Doping And Hot Carrier Injection On Capacitance Behavior Of High Voltage Mosfets [J] . Yogesh Singh Chauhan, Renaud Gillon, Michel Declercq, IETE Technical Review . 2008,第5期

机译：横向不均匀掺杂和热载流子注入对高压MOSFET电容行为的影响
2. Hole trapping during low gate bias, high drain bias hot-carrier injection in n-MOSFETs at 77 K [J] . Heremans P., Groeseneken G. IEEE Transactions on Electron Devices . 1992,第4期

机译：n MOSFET中低栅极偏置，高漏极偏置热载流子注入期间的空穴捕获为77 K
3. P-well bias dependence of electron trapping in gate oxide of n-MOSFETs during substrate hot-electron injection [J] . Zhao S.P., Taylor S. Electronics Letters . 1992,第22期

机译：衬底热电子注入过程中n MOSFET栅极氧化物中电子陷阱的P阱偏置依赖性
4. A test chip and an accurate measurement system to characterize hot hole injection in the gate oxide of p-MOSFETs [C] . Selmi, L., Sangiorgi, . 1994

机译：测试芯片和精确的测量系统，可表征p-MOSFET栅极氧化层中的热空穴注入
5. Monolayer Doping for Fabrication of Recessed Channel MOSFETs [D] . Nudnure, Veena . 2019

机译：单层掺杂用于制造嵌入式通道MOSFET
6. LOFAR Lightning Imaging: Mapping Lightning With Nanosecond Precision [O] . B. M. Hare, O. Scholten, A. Bonardi, -1

机译：LOFAR闪电成像：以纳秒级精度映射闪电
7. Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact [O] . Yang, Yang, Wu, Zhenhua, Yang, Wen, 2017

机译：基于FpGa的优化自旋注入效率和自旋mOsFET工作原理低阻隔铁磁体/绝缘体/ n-si隧道接触

Lightning Pin Injection Test: MOSFETS in 'ON' State

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