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Impact of Solid-Phase Crystallization of Amorphous Silicon on the Chemical Structure of the Buried Si/ZnO Thin Film Solar Cell Interface.

机译:非晶硅固相结晶对埋地si / ZnO薄膜太阳能电池界面化学结构的影响。

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摘要

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

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