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首页> 美国政府科技报告 >Translational-energy-resolved studies of photographed carrier-induced reactions on semiconductor surfaces. Electron transfer reactions at semiconductor surfaces: Dynamical studies
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Translational-energy-resolved studies of photographed carrier-induced reactions on semiconductor surfaces. Electron transfer reactions at semiconductor surfaces: Dynamical studies

机译：半导体表面上拍摄载体诱导反应的平移能量分辨研究。半导体表面的电子转移反应：动力学研究

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Enhancement in carrier lifetime has made semiconductors of interest for applications in photocatalysis ranging from solar energy conversion to environmental remediation. The authors have focused recent experimental work on adsorbed methyl halide molecules (CH(sub 3)X, X = Br, Cl, I) on GaAs(110). They have identified and observed for the first time several chemical processes which control photochemistry on semiconductor surfaces. During this last year, the authors have focused on relating the observed electron transfer processes to the structure of the adsorbate molecular layer. To accomplish this, they have had to expand the experimental work with new measurement techniques. The primary focus of the work has been in determining the orientation of the adsorbates with regard to the underlying surface correlation. An important result of this work has been that the authors have provided for the first time an unequivocal determination of the orientation of physisorbed molecules on semiconductor surfaces. In addition, the work has suggested that photostimulated desorption of energetic neutrals can provide a useful technique for determining adsorbate molecular orientation. The primary experimental technique has involved dynamic studies employing angle-resolved time-of-flight (TOF) mass spectrometry in concert with tunable laser excitation sources, to obtain information regarding the kinetic energy and angular distribution of reaction products.

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