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首页> 美国政府科技报告 >New novel cleaning technique for extending mean time between mechanical cleans in a Genus tungsten CVD reactor
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New novel cleaning technique for extending mean time between mechanical cleans in a Genus tungsten CVD reactor

机译：新型清洁技术用于延长钨钨CVD反应器中机械清洁之间的平均时间

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During the chemical vapor deposition of blanket tungsten from the reduction of tungsten hexafluoride (WF(sub 6)), metallic parts within the reaction chamber accumulate metallic tungsten, tungsten oxyfluorides, and other related tungsten species. The usual method for removal of the chamber deposits is to open the chamber and perform a labor intensive mechanical clean, which involves the use of hydrogen peroxide (H(sub 2)O(sub 2)) and deionized (DI) water, or an in-situ fluorine-base plasma clean. The authors have investigated the use of repetitive in-situ nitrogen trifluoride (NF(sub 3)) plasma cleans during the course of operating a Genuse 8721 tungsten chemical vapor deposition reactor. The Genuse reactor has been retrofitted with self-ratchetting linear slides, which allow the wafer clamps to be extended into the NF(sub 3) plasma. They have extended the mean time between failures (MTBF) due to the use of 10 minute plasma clean every 75--100 wafers. Deposition for this process is 8,000 angstroms per wafer, using 6 deposition sites. The total tungsten deposition for a 0.5 micron tungsten plug is 4 microns, per a 25 wafer lot. Instead of a total removal of the accumulated tungsten from the chamber hardware, a partial etchback of the deposition from the wafer clamps and wafer chucks was performed. With this, sources for particles and backside deposition were eliminated. They see an increase in wafer-to-wafer uniformity, lot-to-lot repeatability, and particle reduction due to the use of frequent plasma clean. Recovery time after a plasma clean is excellent and no detrimental effects from hydrogen fluoride ''poisoning'' were seen.

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