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Characteristics of a thermionic converter with a fluoride vapor deposited tungsten emitter etched to preferentially expose the 110 crystal planes

机译：具有氟化物气相沉积的钨发射体的热离子转换器的特征被蚀刻以优先暴露110个晶面

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摘要

Thermionic converter with fluorine vapor deposited tungsten emitter etched to expose crystal planes

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作者
Lawrence, J.; Wilson, V. C.;
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年度 1969
页码 1-117
总页数 117
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CONVERTERS; CRYSTALS; EMITTERS; ETCHING; FLUORINE; TUNGSTEN; HIGH TEMPERATURE; PRESSURE; SURFACE PROPERTIES; VAPORS; X RAY ANALYSIS;

机译：转换器;晶体;发射体;蚀刻;氟;钨;高温;压力;表面特性;蒸汽; X射线分析;

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专利

1. Increase in the Power of Arc Cesium-Oxygen Thermionic Converters with Tungsten Electrodes at Elevated Emitter Temperatures [J] . V. P. Kobyakov, A. G. Kalandarishvili Technical physics . 2003,第2期

机译：发射极温度升高时，带有钨电极的电弧铯-氧热电子转换器的功率增加
2. Promising Variants of Single Crystal Tungsten Electrodes for High-Performance Thermionic Converters [J] . V. P. Kobyakov Technical physics . 2002,第10期

机译：高性能热电子转换器用单晶钨电极的有前途的变体
3. Nanocrystalline lanthanum boride thin films by femtosecond pulsed laser deposition as efficient emitters in hybrid thermionic-photovoltaic energy converters [J] . Bellucci A., Mastellone M., Girolami M., Applied Surface Science . 2020,第May30期

机译：纳米晶镧通过飞秒脉冲激光沉积作为混合热离子光伏能量转换器的高效发射器
4. Behaviour of carbon on tungsten monocrystal (110) and (112) faceswhen simulating interaction with thermionic converter interelectrodemedium [C] . Yarygin V.I., Savvov R.V., Agafonov V.R., Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety . -1

机译：碳在单晶钨（110）和（112）面上的行为模拟与热电子转换电极之间的相互作用时中
5. LIFE TEST ON FOUR ELECTRICALLY-HEATED THERMIONIC DIODES WITH FLUORIDE VAPOR- DEPOSITED TUNGSTEN EMITTERS. [O] . D. Ernst, C. Pezaris 1969

机译：氟化物气相沉积钨发射器的四个电加热热离子二极管的寿命试验。
6. Characteristics of a Thermionic Converter with a Fluoride Vapor Deposited Tungsten Emitter Etched to Preferentially Expose the 110 Crystal Planes [R] . Lawrence, J., Wilson, V. C. 1969

机译：具有氟化物气相沉积的钨发射器的热离子转换器的特性被蚀刻以优先暴露110个晶体平面

Characteristics of a thermionic converter with a fluoride vapor deposited tungsten emitter etched to preferentially expose the 110 crystal planes

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