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Effect of 40-mev protons on semiconductors as determined with an improved method of measuring diffusion length of minority carriers

机译：用改进的测量少数载流子扩散长度的方法测定40-mev质子对半导体的影响

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摘要

Radiation induced changes in semiconductor materials from 40 MeV proton radiation determined by improved infrared method

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作者
Beatty, M. E.; Hill, G. F.;
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年度 1965
页码 1-21
总页数 21
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DIFFUSION LENGTH; INFRARED RADIATION; IRRADIATION; MINORITY CARRIERS; PROTONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTORS (MATERIALS); IRRADIATION; RADIATION EFFECT; SEMICONDUCTOR DEVICE;

机译：扩散长度;红外辐射;辐照;少数承运人;区质子;辐射效应;半导体器件;半导体（材料）;辐照;辐射效应;半导体器件;

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专利

1. Improved differential photocurrent method for measurement of optical‐absorption coefficient and minority‐carrier diffusion length in a semiconductor [J] . Review of Scientific Instruments . 1983,第9期

机译：改进的差分光电流法测量半导体中的光吸收系数和少数载流子扩散长度
2. Minority carrier diffusion length measurements of semiconductors using a multiwavelength laser SQUID microscope [J] . Daibo M., Kikuchi T., Yoshizawa M. IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用多波长激光SQUID显微镜测量半导体的少数载流子扩散长度
3. Minority carrier diffusion length measurements of semiconductors using a multiwavelength laser SQUID microscope [J] . Daibo M., Kikuchi T., Yoshizawa M. IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用多波长激光SQUID显微镜测量半导体的少数载流子扩散长度
4. A Study on Minority Carrier Diffusion Length of Semiconductor with Constant Measure of Surface Photovoltage [C] . He Xuan, Chen Changying, Deng Wei, Symposium on Photonics and Optoelectronics . 2012

机译：具有恒定测量表面光电常数测量的少数载波扩散长度研究
5. Aluminum gettering of crystalline silicon for improvement of minority carrier diffusion length and for studies of fundamental diffusion mechanisms. [D] . Joshi, Subhash Mukund. 2000

机译：晶体硅的铝吸杂剂可改善少数载流子扩散长度并用于基本扩散机理的研究。
6. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging [O] . K. Alberi, B. Fluegel, H. Moutinho, -1

机译：通过光致发光成像测量跨多晶半导体中多个晶粒的远程载流子扩散
7. Measurement of minority-carrier diffusion lengths using wedge-shaped semiconductor photoelectrodes [O] . Pala Ragip A., Leenheer Andrew J., Lichterman Michael, 2014

机译：使用楔形半导体光电极测量少数载流子扩散长度
8. Effect of 40-Mev Protons on Semiconductors as Determined with an Improved Method of Measuring Diffusion Length of Minority Carriers [R] . Beatty, M. E., Hill, G. F. 1965

机译：用改进的少数载体扩散长度测定方法确定40-mev质子对半导体的影响

Effect of 40-mev protons on semiconductors as determined with an improved method of measuring diffusion length of minority carriers

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