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Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology

机译：功率siGe异质结双极晶体管（HBT）采用全自对准双mesa技术制造

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Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technology. With the novel process technology, a common-emitter 2x2x30 sq micrometer device exhibits high maximum oscillating frequency (f(sub max)) and cut-off frequency (f(sub T)) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with l0x2x30 sq micrometer emitter is expected to provide an output power of 25.6 dBm with a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz.

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作者
Lu, Liang-Hung; Mohammadi, Saeed; Ma, Zhen-Qiang; Ponchak, George E.; Alterovitz, Samuel A.; Strohm, Karl M.; Luy, Johann-Friedrich;
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年度 2001
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bipolar transistors; Heterojunctions; Power efficiency; High frequencies; Emitters; Fabrication; Oscillations;

机译：双极晶体管;异质结;功率效率;高频;发射器;制造;振荡;

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专利

1. High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology [J] . Schreiber H.-U. Electronics Letters . 1992,第5期

机译：通过自对准技术制造的高速双台面Si / SiGe异质结双极晶体管
2. Fully self-aligned double mesa SiGe-HBT with external transistor optimisation [J] . Behammer D., Albers J.N. Electronics Letters . 1996,第19期

机译：具有外部晶体管优化功能的完全自对准双台面SiGe-HBT
3. 16 Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors [J] . Schreiber H.-U., Albers J.N. Electronics Letters . 1993,第25期

机译：使用双台面Si / SiGe异质结双极晶体管的16 Gbit / s多路复用器IC
4. SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology [C] . Liang-Hung Lu, Mohammadi, S., . 2001

机译：通过完全自对准双台面技术制造的SiGe功率异质结双极晶体管（HBT）
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. Design, simulation and fabrication of a self-aligned SiGe base heterojunction bipolar transistors for low power operation. [O] . Abdulabbas Hussain -1

机译：用于低功率操作的自对准SiGe基础异质结双极晶体管的设计，仿真和制造。

Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology

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