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首页> 美国政府科技报告 >Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor
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Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

机译：在sOI中制造的单晶硅灯丝：用于微制造的光度CO2传感器的潜在IR源

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The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

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