Fluorine Implantation and Residual Stresses in Polysilicon Films

机译：多晶硅薄膜中的氟注入和残余应力

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As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.

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作者
Lowery, Lynn; Zschack, Paul; Angelis, Robert De;
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年度 1994
页码 1-9
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DIFFUSION; FLUORINE; IMPLANTATION; MICROELECTRONICS; RELIABILITY; RESIDUAL STRESS; SILICON POLYMERS; STRESS RELAXATION; VERY LARGE SCALE INTEGRATION; polysilicon fluorine microelectronic devices hot carrier effect scaling VLSI; stress relaxation;

机译：扩散;氟;注入;微电子;可靠性;残余应力;硅聚合物;应力松弛;非常大规模的集成;多晶硅氟微电子器件热载流子效应缩放VLsI;压力放松;

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专利

1. Characteristics of Pr_2O_3 Gate Dielectric Thin-Film Transistors Fabricated on Fluorine-Ion-Implanted Polysilicon Films [J] . Chia-Wen Chang, Chih-Kang Deng, Jiun-Jia Huang Electrochemical and solid-state letters . 2007,第11期

机译：氟离子注入多晶硅膜上制备的Pr_2O_3栅介电薄膜晶体管的特性
2. FLUORINE BEHAVIOR IN BF₂+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING [J] . 林成鲁, 倪如山, 邹世昌电子科学学刊：英文版 . 1990,第002期

机译：BF _{2 + 植入多晶硅膜的氟行为进行快速热退火}
3. Residual Stress Relaxation and Property Modifications of Polysilicon Films by Ion Implantation [J] . Ji-Won Suk, Tae-June Kang, Sang-Jun Lee, Sensors and materials . 2004,第2期

机译：离子注入对多晶硅膜的残余应力松弛和性能改性
4. A NOVEL METHOD TO RELEASE RESIDUAL STRESSES IN POLYSILICON FILMS [C] . Tae June Kang, Ji Won Suk, Sang Jun Lee, International Conference on Adaptive Structures and Technologies . 2004

机译：一种新的多晶硅膜释放残余应力的方法
5. Depth profiling residual stresses in thin tungsten films using x-ray diffraction. [D] . Ely, Thomas M. 1999

机译：使用X射线衍射分析钨薄膜中的深度轮廓残余应力。
6. Statistical Investigation of the Mechanical and Geometrical Properties of Polysilicon Films through On-Chip Tests [O] . Ramin Mirzazadeh, Aldo Ghisi, Stefano Mariani 2018

机译：通过片上测试对多晶硅膜的力学和几何特性进行统计研究
7. Characteristics of Top‐Gate Polysilicon Thin‐Film Transistors Fabricated on Fluorine‐Implanted and Crystallized Amorphous Silicon Films [O] . Chien Kuo Yang, Tan Fu Lei, Chung Len Lee 1996

机译：氟注入和结晶非晶硅膜上制造的顶栅多晶硅薄膜晶体管的特性

Fluorine Implantation and Residual Stresses in Polysilicon Films

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