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首页> 美国政府科技报告 >Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rupture and Single- Event Burnout
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Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rupture and Single- Event Burnout

机译：用于单事件栅极断裂和单事件烧毁的semicoa sCF9550和国际整流器IRHm57260sE的研究

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Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The SCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition standards and requirements. The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

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