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Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

机译：现代微电子和光子器件和技术的辐射测试，表征和资格挑战

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At an earlier conference we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art CMOS technologies. In this presentation, we extend this discussion focusing on the following areas: (1) Device packaging, (2) Evolving physical single even upset mechanisms, (3) Device complexity, and (4) the goal of understanding the limitations and interpretation of radiation testing results.

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作者
LaBel, Kenneth A.; Cohn, Lewis M.;
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年度 2008
页码 p.1-16
总页数 16
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Microelectronics; Photonics; Electronic packaging; Single event upsets; Radiation damage; Performance tests; Cmos; Optoelectronic devices; Semiconductor devices; Systems-on-a-chip;

机译：微电子学;光子学;电子封装;单事件干扰;辐射损伤;性能测试; Cmos;光电器件;半导体器件;片上系统;

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3. Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects [J] . Schwank J.R., Shaneyfelt M.R., Dodd P.E. IEEE Transactions on Nuclear Science . 2013,第3aPart2期

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Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

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