Diagonal and Off-Diagonal Disorder in Doped Quantum Wells

机译：掺杂量子阱中的对角线和非对角线紊乱

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The formation of an impurity band in the electronic density of states (DOS) of a quantum well of Ga sub 1-x Al sub x As/GaAs is considered. Also considered are both the bandwidth coming out of a fluctuation in the binding energy (diagonal disorder) and a fluctuation in the transfer matrix -V sub ij - due to randomness on the impurity locations in the plane parallel to the interfaces. It is calculated that the DOS for an impurity layer thickness is half the well length, and it is shown that in this case the off-diagonal disorder is dominant. Comparison with experimental results is discussed.

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Deandradaesilva, E. A.; Dacunhalima, I. C.; Ferreiradasilva, A.; Leal, C. E. S.;
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年度 1987
页码 p.1-24
总页数 24
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Quantum wells; Additives; Electron density (Concentration); Impurities; Bandwidth; Gallium arsenides; Interfaces; Variations;

机译：量子阱;添加剂;电子密度（浓度）;杂质;带宽;砷化镓;界面;变化;

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Diagonal and Off-Diagonal Disorder in Doped Quantum Wells

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