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Schnelles Schalten von Ferninfrarot-Strahlung durch Brechungsindexaenderung in Halbleitern ueber Photoionisation (Fast Switching of Far Infrared Radiation by Refractive Index Change in Semiconductors Using Photoionization)

机译：在Halbleitern ueber光电离（schionles schalten von Ferninfrarot-strahlung durch Brechungsindexaenderung）使用光电离法通过半导体中的折射率变化快速切换远红外辐射

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The optical switching of FIR radiation in the subnanosecond range was investigated. The 119 micrometer radiation of a water-vapor laser can be switched in less than one nsec with a modulation degree of up to 85 percent by the excitation of Si and GaAs with nitrogen laser pulses. The switching times were measured by a sampling technique. The reflection and transmission behavior of the Si switch was registered on real-time oscilloscopes in the 100 micrometer-long relaxation phase after the UV excitation. The scaling of switching time and modulation degree with UV pulse energy was determined. The experimental results agree well with the numerical results of a one-dimensional model calculation. Characteristic deviations indicate heating effects and hence a reduction of charge carrier mobility during the excitation phase due to the UV pulse.

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Vogel, T.;
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年度 1986
页码 p.1-76
总页数 76
原文格式 PDF
正文语种 GER
中图分类工业技术;
关键词
Far infrared radiation; Switching; Photoionization; Refractivity; Semiconductors (Materials); Charge carriers; Mathematical models; Modulators; Molecular excitation; Molecular relaxation; Nitrogen lasers; Ultrashort pulsed lasers;

机译：远红外辐射;开关;光电离;折射率;半导体（材料）;电荷载体;数学模型;调制器;分子激发;分子弛豫;氮激光器;超短脉冲激光器;

Schnelles Schalten von Ferninfrarot-Strahlung durch Brechungsindexaenderung in Halbleitern ueber Photoionisation (Fast Switching of Far Infrared Radiation by Refractive Index Change in Semiconductors Using Photoionization)

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