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High Power Thyristors with 5 Kv Blocking Voltage. Volume 1: Development of High-Voltage-Thyristors (4.5 Kv) with Good Dynamic Properties

机译：具有5 Kv阻断电压的大功率晶闸管。第1卷：开发具有良好动态特性的高压晶闸管（4.5 Kv）

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摘要

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

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作者
Lock, K.; Patalong, H.; Platzoeder, K.;
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年度 1979
页码 p.1-35
总页数 35
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Direct current; Electric power transmission; High voltages; Thyristors; Electrical resistance; Neutron irradiation; Silicon; Transmission lines; Trigger circuits;

机译：直流电;电力传输;高压;晶闸管;电阻;中子辐射;硅;传输线;触发电路;

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专利

1. Medium Voltage–High Power Converter Topologies Comparison Procedure, for a 6.6 kV Drive Application Using 4.5 kV IGBT Modules [J] . Sanchez-Ruiz A., Mazuela M., Alvarez S., Industrial Electronics, IEEE Transactions on . 2012,第3期

机译：适用于使用4.5 kV IGBT模块的6.6 kV驱动应用的中压-大功率转换器拓扑比较程序
2. Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor [J] . Koji Nakayama, Atsushi Tanaka, Shuji Ogata, Japanese journal of applied physics . 2014,第4期

机译：4.5 kV 4H-SiC换向栅极关断晶闸管的最小栅极触发电流衰减
3. 4.5kV FRD Development for high current power modules [J] . Jiang Liu, Yueyang Liu, Rui Jin, MATEC Web of Conferences . 2018,第1期

机译：用于大电流电源模块的4.5kV FRD开发
4. 4.5kV Insulated Gate Triggered Thyristor (IGTT) with High $di/dt$ Characteristics for Pulse Power Applications [C] . Chao Liu, Wanjun Chen, Yijun Shi, International Symposium on Power Semiconductor Devices and ICs . 2019

机译：具有高 $ di / dt $ 特性的4.5kV绝缘栅触发晶闸管（IGTT），用于脉冲电源应用
5. Electrical breakdown strength of 5 kV ethylene propylene rubber (EPR) cable under ac voltage. [D] . Pradhan, Bishal. 2014

机译：交流电压下5 kV乙丙橡胶（EPR）电缆的电击穿强度。
6. Spironolactone and its main metabolite canrenoic acid block hKv1.5 Kv4.3 and Kv7.1+minK channels [O] . Ricardo Gómez, Lucía Núñez, Ricardo Caballero, 2005

机译：螺内酯及其主要代谢产物烯丙酸可阻断hKv1.5Kv4.3和Kv7.1 + minK通道
7. 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode [O] . Lophitis N., Antoniou M., Udrea F., 2016

机译：具有高功率技术和浅二极管阳极的4.5 kV双模栅极换向晶闸管设计

High Power Thyristors with 5 Kv Blocking Voltage. Volume 1: Development of High-Voltage-Thyristors (4.5 Kv) with Good Dynamic Properties

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