首页> 美国政府科技报告 >EBIC Study of Dislocation Networks in Unprocessed and Processed Web-Silicon Ribbon
【24h】

EBIC Study of Dislocation Networks in Unprocessed and Processed Web-Silicon Ribbon

机译:未加工和加工Web-silicon Ribbon中错位网络的EBIC研究

获取原文

摘要

Experimental techniques for the preparation of EBIC samples of web-dentritic silicon are described. Both as-grown and processed material were investigated. High density dislocation networks were found close to twin planes in the bulk of the material. The electrical activity of these networks is reduced in processed material for reasons which are not understood. (ERA citation 07:046201)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号