首页> 美国政府科技报告 >Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982
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Fundamental Studies of Grain Boundary Passivation in Polycrystalline Silicon with Application to Improved Photovoltaic Devices. A Research Report Covering Work Completed from February 1981 to January 1982

机译:多晶硅晶界钝化的基础研究及其在光电器件改进中的应用。涵盖工作的研究报告于1981年2月至1982年1月完成

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Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in the boundaries. Our results show that these generalizations are not true and that a variety of barrier behaviors are found. Several of our new analytical techniques for studying grain boundaries and their passivation have been upgraded, including a new cell for Fourier Transform Infrared (FTIR) studies, electrochemical techniques, and a laser scanning apparatus for imaging grain boundaries. Grain boundaries in a variety of samples have been successfully passivated by the use of both the Kaufman ion source and a dc discharge apparatus. 20% improvements in cell efficiencies have been observed in large grained poly-Si cells, and the time of treatment has been drastically reduced. (ERA citation 08:001942)

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