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New Methods of Fabricating Integrated Circuits for High Voltages

机译:制造高压集成电路的新方法

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Describes the production of bipolar integrated circuits with breakdown voltages of 200 to 250 volts. Particular attention is given to the following new techniques: Aluminum implantation with subsequent diffusion is used as a fast insulation method; V-grooves, which are heavily doped with phosphorus, are used to form low-ohmic collector contacts; and Polycrystalline silicom doped with oxygen is used to produce a surface passivation layer which suppresses parasitic MOS-channels. Video end stages for TV equipment, and regulation and control circuits in vehicles, are made accessible to integration as a result of the methodologies described.

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