• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国政府科技报告 >The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-Doped Silicon
【24h】

The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-Doped Silicon

机译：硼掺杂硅中空穴迁移率，有效质量和电阻率的温度和掺杂浓度依赖性的理论和实验研究

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Theoretical expressions for resistivity and conductivity mobility of holes a functions of dopant density and temperature have been derived for boron-doped silicon. The model is applicable for dopant densities from 10 to the 13th power/cc to 3 times 10 to the 18th power/cc and temperatures between 100K and 400K. Resistivity measurements on nine boron-doped silicon slices with dopant densities from 4.5 times 10 to the 14th power/cc to 3.2 times 10 to the 18th power/cc were performed for 100K < or = T < or = 400K, using a planar four-probe square-array test structure. Finally, formulations for the density-of-states effective mass, conductivity effective mass, and Hall effective mass are described, and the results are applied to the calculations of hole masses in boron-doped silicon for 10 to the 14th power/cc < or = N sub A < or = 10 to the 18th power/cc and 50K < or = T < or = 500K.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号