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首页> 美国政府科技报告 >Method and Apparatus for the Chemical Vapor Deposition of Materials.
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Method and Apparatus for the Chemical Vapor Deposition of Materials.

机译：用于材料的化学气相沉积的方法和装置。

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摘要

The halide chemical vapor deposition process deposits a chemical compound comprised of at least two different elements. The method employs a first process gas which includes a halogenated compound of a first one of the at least two different elements, and a second process gas which includes hydrogen and a second one of at least two different elements. The process gases are maintained in separation until they are contacted in a deposition chamber proximate a substrate. The gases, which are generally preheated to a temperature of less than their thermal decomposition temperatures, are contacted in a deposition region proximate the substrate, and react to generate a deposition species and a hydrogen halide which is removed. Also disclosed is an apparatus for practicing the invention.

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