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Semiconductor Measurement Technology: The Results of an Interlaboratory Study ofEllipsometric Measurements of Thin Film Silicon Dioxide on Silicon

机译：半导体测量技术：硅上薄膜二氧化硅的等量测量的实验室间研究结果

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The results of an interlaboratory study with nine participants for themeasurement of thin film oxides on silicon are presented. The purpose of the study was to establish a baseline of agreement between laboratories for ellipsometric thin film measurements. The maximum standard deviations of the thickness calculated between laboratories using a common data reduction method were 0.22 nm for 10 nm oxides, 0.43 nm for 50 nm oxides, and 0.32 nm for 100 nm oxides.

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作者
Belzer, B. J.; Blackburn, D. L.;
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年度 1997
页码 p.1-33
总页数 33
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor devices; Reliability(Electronics); Metrology; Silicon; Silicondioxide; Thin films; Ellipsometry; Statistical analysis; Laboratory tests;

机译：半导体器件;可靠性（电子）;计量学;硅;二氧化硅;薄膜;椭圆偏振测量;统计分析;实验室测试;

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专利

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机译：集成电路中二氧化硅薄膜的热导率测量
2. Simultaneous In situ Measurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry [J] . Chishio Koshimizu, Takayuki Ohta, Tatsuo Matsudo, Japanese journal of applied physics . 2012,第4Issue1期

机译：使用低相干干涉法同时原位测量二氧化硅等离子体刻蚀过程中的硅衬底温度和二氧化硅膜厚度
3. Characterization and depth profiles measurements of silicon nitride thin films on silicon and molybdenum substrates by Auger electron spectroscopy [J] . Fakih C, Fakih GB, Kaafarani A, Computational Materials Science . 2005,第1a3期

机译：俄歇电子能谱法表征硅和钼衬底上氮化硅薄膜的特性和深度分布
4. The study of the anomalous thermomechanical effect of fluorine-doped silicon dioxide (FSG) films using temperature dependent FTIR measurements [C] . Knapp Matthias, Jager Philipp, Ruile Werner, IEEE International Ultrasonics Symposium . 2015

机译：使用温度相关的FTIR测量研究掺氟二氧化硅（FSG）薄膜的异常热机械效应
5. NUCLEAR REACTION MEASUREMENT OF IMPLANTED OXYGEN-18 TRANSPORT DURING WATER DIFFUSION IN THIN SILICON-DIOXIDE FILMS. [D] . PFEFFER, ROBERT LESTER. 1980

机译：薄二氧化硅薄膜中水扩散过程中注入的Oygen-18传输的核反应测量。
6. Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements [O] . Pascal Sánchez, Olaya Lorenzo, Armando Menéndez, 2011

机译：通过辉光放电光谱研究掺杂元素来表征非晶硅薄膜。电导率和带隙能量测量的相关性
7. Optical measurement of surface profiles of silicon dioxide films on silicon substrates and carbon coatings on magnetic disks. [O] . Hahn Walter Gordon. 1992

机译：光学测量硅基板上的二氧化硅膜和磁盘上的碳涂层的表面轮廓。
8. Measurements and Modeling of Thin Silicon Dioxide Films on Silicon [R] . Kalnitsky, A., Tay, S. P., Ellul, J. P., 1989

机译：硅上薄二氧化硅薄膜的测量与建模

Semiconductor Measurement Technology: The Results of an Interlaboratory Study ofEllipsometric Measurements of Thin Film Silicon Dioxide on Silicon

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