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Bipolar Transistors for Use in Monolithic Bandgap References and TemperatureTransducers

机译：用于单片带隙基准和温度传感器的双极晶体管

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A formal definition of the operating regions is given. Also the calculation ofthe temperature behavior in all three operating regions is performed in this chapter. The transistor structure is defined by its layout and by the fabrication process. In chapter 4 the influence of the structure is evaluated. The theory has been verified by measurements which are presented in chapter 5. In chapter 6, the developed theory is used to find the optimal bipolar transistor for use in bandgap references and temperature transducers, and to compensate unwanted effects in a PTAT voltage. Finally, the chapter 7, the results are summarized.

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作者
van der Lingen, K.;
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年度 1996
页码 p.1-158
总页数 158
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bipolar transistors; Transducers; Temperature compensation; Semiconductor devices; Nonlinearity; Temperature dependence; Temperature effects; Carrier injection; Direct current; Integrated circuits; Energy gas(Solid State); Electric current; Geometry; Veri;

机译：双极晶体管;传感器;温度补偿;半导体器件;非线性;温度依赖性;温度效应;载流子注入;直流电;集成电路;能量气体（固态）;电流;几何; Veri;

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1. E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors [J] . Squartecchia Michele, Johansen Tom K., Dupuy Jean-Yves, Microwave and optical technology letters . 2019,第2期

机译：基于堆叠晶体管的电子带铟磷化铟双异质结双极晶体管单整体微波集成电路功率放大器
2. Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors [J] . J. Mimila-Arroyo Journal of Applied Physics . 2016,第16期

机译：电气确定双极结型晶体管的发射极和基极带隙能
3. Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor [J] . Achmad Fadhol Makara Seri Teknologi . 2010,第1期

机译：Si / Si1-xGex / Si异质结双极晶体管对基极电阻的高影响掺杂和带隙变窄的研究
4. The radiation-hardened voltage references on bipolar and JFET transistors [C] . Starchenko E.I., Prokopenko N.N., Budyakov P.S. IEEE GCC Conference and Exhibition . 2015

机译：双极和JFET晶体管上经过辐射硬化的参考电压
5. MINORITY CARRIER TRANSPORT IN HEAVILY DOPED N-TYPE SILICON (EMITTERS, PHOSPHORUS EPITAXY, BIPOLAR TRANSISTOR, BANDGAP NARROWING, SOLAR CELL). [D] . DEL ALAMO, JESUS ANGEL. 1985

机译：重掺杂N型硅中的少数族裔载运子（发射极，磷表皮，双极晶体管，能隙窄带，太阳能电池）。
6. Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors [O] . Junga Ryou, Yong-Sung Kim, Santosh KC, -1

机译：介电环境和可调带隙晶体管的单层MoS2带隙调制
7. Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor [O] . Achmad Fadhol 2010

机译：si / si1-xGex / si异质结双极晶体管高掺杂对基极电阻和带隙窄化的影响研究
8. Study of Ultra-Low Resistivity Material for Monolithically Integrated Npn and PnpAlGaAs/GaAs Heterojunction Bipolar Transistors [R] . Enquist, P. M. 1996

机译：用于单片集成Npn和pnpalGaas / Gaas异质结双极晶体管的超低电阻率材料的研究

Bipolar Transistors for Use in Monolithic Bandgap References and TemperatureTransducers

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