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On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

机译：在基于AlGaN的深度紫外发光二极管的P-AlGaN / N-AlGaN / P-AlGaN电流扩散层

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Abstract In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted PNP-AlGaN structure can induce an energy barrier in the hole injection layer that can modulate the lateral current distribution. We also find that the current spreading effect can be strongly affected by the thickness, the doping concentration, the PNP loop, and the AlN composition for the inserted n-AlGaN layer. Therefore, if the PNP-AlGaN structure is properly designed, the forward voltage, the external quantum efficiency, the optical power, and the wall-plug efficiency for the proposed DUV LEDs can be significantly improved as compared with the conventional DUV LED without the PNP-AlGaN structure.

机译：摘要在本报告中，已经描述并研究了具有不同P-AlGaN / N-AlGaN / P-AlGaN（PNP-AlGaN）结构电流扩展层的AlgaN的深紫色发光二极管（DUV LED）。根据我们的结果，采用的PNP-AlGaN结构可以在空穴注入层中诱导能够调节横向电流分布的能量屏障。我们还发现，目前的散布效果可以受到插入的N-AlGaN层的厚度，掺杂浓度，PNP环和ALN组合物的强烈影响。因此，如果PNP-AlGaN结构被正确设计，则与没有PNP的传统DUV LED相比，可以显着提高前向电压，外部量子效率，光功率和墙壁插头效率 - 木笋结构。

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Jiamang Che; Chunshuang Chu; Kangkai Tian; Jianquan Kou; Hua Shao; Yonghui Zhang; Wengang Bi; Zi-Hui Zhang;
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年度 2018
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正文语种 eng
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1. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer [J] . Kashima Yukio, Maeda Noritoshi, Matsuura Eriko, Applied physics express . 2018,第1期

机译：通过在p-AlGaN接触层上使用高反射光子晶体实现高外部量子效率（10％）的基于AlGaN的深紫外发光二极管
2. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [J] . Jiamang Che, Hua Shao, Jianquan Kou, Nanoscale Research Letters . 2019,第1期

机译：通过局部调制基于AlGaN的深紫外发光二极管的n-AlGaN层中的掺杂类型来改善电流扩散
3. On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes [J] . Tian Kangkai, Chu Chunshuang, Shao Hua, Superlattices and microstructures . 2018,第OCTa期

机译：基于AlGaN的深紫外发光二极管的p-EBL / p-AlGaN / p-GaN结构的极化效应
4. The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes [C] . M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, 応用物理学会秋季学術講演会;応用物理学会 . -1

机译：镁浓度和准分子激光退火（ELA）对基于AlGaN的UVB激光二极管应用的p-AlGaN包覆层的影响
5. Polarization Engineering for Deep-Ultraviolet Light-Emitting Diodes [D] . Liu, Cheng. 2020

机译：深度紫外发光二极管的偏振工程
6. On the p-AlGaN-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [O] . Jiamang Che, Chunshuang Chu, Kangkai Tian, 2018

机译：在基于AlGaN的深紫外发光二极管的p-AlGaN / n-AlGaN / p-AlGaN电流扩散层上
7. UV Light-emitting Diode with Buried Polarization-induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction [O] . Yi Lu, Chuanju Wang, Victor Paiva De Oliveira, 2021

机译：具有掩埋偏振诱导的N-AlGaN / Ingan / P-AlGaN隧穿接线的UV发光二极管

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

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