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Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

机译：分子束外延生长的亚毫安级阈值电流伪态InGaAs / AlGaAs埋藏异质结构量子阱激光器

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We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-µm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-µm-wide stripe and 425-µm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 µm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.

机译：我们报告了通过分子束外延生长的低阈值电流应变InGaAs / AlGaAs单量子阱激光器。对于1540 µm长的激光器，测量了在990 nm处114 A / cm2的广域阈值电流密度。对于具有2 µm宽的条带和425 µm长的腔体的未涂层掩埋异质结构器件，在950 nm处可获得2.4 mA的阈值电流。使用反射涂层时，最好的设备显示0.9 mA的阈值电流（L = 225 µm）。初步的调制测量显示，高达5.5 GHz的带宽受到检测器响应的限制。

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Eng L. E.; Chen T. R.; Sanders S.; Zhuang Y. H.; Zhao B.; Yariv A.; Morkoç H.;
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年度 1989
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专利

1. Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy [J] . Lammert R.M., Cockerill T.M. IEEE Photonics Technology Letters . 1994,第9期

机译：选择性区域外延生长的亚毫安级阈值掩埋异质结构InGaAs / GaAs单量子阱激光器
2. Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates [J] . Hanmin Zhao, MacDougal M.H. IEEE journal of selected topics in quantum electronics . 1995,第2期

机译：亚毫安级阈值电流InGaAs-GaAs-AlGaAs激光器和在非平面衬底上生长的激光器阵列
3. Submilliampere threshold current in 1.3 /spl mu/m InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy [J] . Shimizu H., Kumada K. Electronics Letters . 1998,第16期

机译：气源分子束外延生长的1.3 / spl mu / m InAsP n型调制掺杂MQW激光器中的亚毫安阈值电流
4. Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy [C] . Lammert, R.M., Cockerill, . 1994

机译：选择性区域外延生长的亚毫安级阈值埋藏异质结构InGaAs / GaAs单量子阱激光器
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection [O] . Zhenwu Shi, Lu Wang, Honglou Zhen, 2013

机译：峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长用于4.3μm中波长红外检测
7. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy [O] . L. E. Eng, T. R. Chen, S. Sanders, 1989

机译：Subsilliampere阈值电流假形象InGaAs / Algaas埋藏 - 异质结构量子孔通过分子束外延生长
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

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