• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文OA文献 >Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se_2/CdS) solar cell interfaces and implications for improving performance
【2h】

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se_2/CdS) solar cell interfaces and implications for improving performance

机译：缺陷对CIGS（Cu（In，Ga）Se_2 / CdS）太阳能电池界面上的能带偏移和能量学的预测作用及其对改善性能的影响

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The laboratory performance of CIGS (Cu(In,Ga)Se_2) based solar cells (20.8% efficiency) makes them promising candidate photovoltaic devices. However, there remains little understanding of how defects at the CIGS/CdS interface affect the band offsets and interfacial energies, and hence the performance of manufactured devices. To determine these relationships, we use density functional theory with the B3PW91 hybrid functional that we validate to provide very accurate descriptions of the band gaps and band offsets. This confirms the weak dependence of band offsets on surface orientation observed experimentally. We predict that the conduction band offset (CBO) of perfect CuInSe_2/CdS interface is large, 0.79 eV, which would dramatically degrade performance. Moreover we show that band gap widening induced by Ga adjusts only the valence band offset, and we find that Cd impurities do not significantly affect the CBO. Thus we show thatCu vacancies at the interface play the key role in enabling the tunability of CBO. We predict thatNa further improves the CBO through electrostatically elevating the valence levels to decrease the CBO, explaining the observed essential role of Na for high performance. Moreover we find that K leads to a dramatic decrease in the CBO to 0.05 eV, much better than Na. We suggest that the efficiency of CIGS devices might be improved substantially by tuning the ratio of Na to K, with the improved phase stability of Na balancing phase instability from K. All these defects reduce interfacial stability slightly, but not significantly.
机译：基于CIGS（Cu（In，Ga）Se_2）的太阳能电池的实验室性能（效率为20.8％）使其成为有前途的候选光伏器件。但是，对于CIGS / CdS界面上的缺陷如何影响能带偏移和界面能以及所制造设备的性能，仍然知之甚少。为了确定这些关系，我们将密度泛函理论与B3PW91混合泛函一起使用，我们对其进行了验证，可以对带隙和带偏移进行非常准确的描述。这证实了通过实验观察到的带偏移对表面取向的弱依赖性。我们预测，完美的CuInSe_2 / CdS界面的导带偏移（CBO）大，为0.79 eV，这将大大降低性能。此外，我们表明，由Ga引起的带隙加宽仅调整价带偏移，并且我们发现Cd杂质不会显着影响CBO。因此，我们证明了界面处的Cu空位在启用CBO的可调性中起关键作用。我们预测，Na通过静电提高化合价水平来降低CBO，从而进一步改善CBO，从而说明了Na对于高性能的重要作用。此外，我们发现K导致CBO急剧降低至0.05 eV，远优于Na。我们建议，通过调节Na与K的比例，可以显着提高CIGS器件的效率，同时改善Na的相平衡以改善K的相稳定性。所有这些缺陷都会稍微降低界面稳定性，但不会显着降低界面稳定性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号