首页> 外文OA文献 >Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy

【2h】

Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy

机译：表面活性剂辅助分子束外延生长Si / Si_（1-y）C_y超晶格的表征

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Si/Si_(0.97)C_(0.03) superlattices grown on Si(001) substrates by Sb surfactant assisted molecular beam epitaxy are characterized by in situ reflection high energy electron diffraction (RHEED), atomic force microscopy, transmission electron microscopy (TEM), and high resolution x‐ray diffraction. The RHEED shows that, in the absence of Sb, the growth front roughens during Si_(0.97)C_(0.03) growth and smooths during subsequent Si growth. In contrast, when Sb is present, the growth front remains smooth throughout the growth. This observation is confirmed by cross‐sectional TEM, which reveals that for samples grown without the use of Sb, the Si/Si_(0.97)C_(0.03) interfaces (Si_(0.97)C_(0.03) on Si) are much more abrupt than the Si_(0.97)C_(0.03)/Si interfaces. In the case of Sb assisted growth, there is no observable difference in abruptness between the two types of interfaces. Atomic force microscopy micrographs of the Si_(0.97)C_(0.03) surface reveal features that could be the source of the roughness observed by RHEED and TEM.

机译：通过Sb表面活性剂辅助分子束外延生长在Si（001）衬底上生长的Si / Si_（0.97）C_（0.03）超晶格的特征在于原位反射高能电子衍射（RHEED），原子力显微镜，透射电子显微镜（TEM），和高分辨率X射线衍射。 RHEED显示，在没有Sb的情况下，生长前沿在Si_（0.97）C_（0.03）生长期间变粗糙，而在随后的Si生长过程中趋于平滑。相反，当存在Sb时，生长前沿在整个生长过程中保持平稳。横截面TEM证实了这一观察，该结果表明，对于不使用Sb生长的样品，Si / Si_（0.97）C_（0.03）界面（Si上Si_（0.97）C_（0.03）的突变要大得多。比Si_（0.97）C_（0.03）/ Si接口。在Sb辅助生长的情况下，两种界面之间的突变率没有明显的差异。 Si_（0.97）C_（0.03）表面的原子力显微镜照片揭示了可能是通过RHEED和TEM观察到的粗糙度来源的特征。

著录项

作者
Pettersson P. O.; Ahn C. C.; McGill T. C.; Croke E. T.; Hunter A. T.;
展开▼
作者单位

展开▼
年度 1996
总页数
原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
中图分类

相似文献

外文文献
中文文献
专利

1. Characterization and Comparison of Strained Si_(1-y)C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method [J] . Tatsuro WATAHIKI, Hanae ISHIHARA, Katsuya ABE, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4BPt1期

机译：气源分子束外延和热线电池法生长的应变Si_（1-y）C_y金属氧化物半导体场效应晶体管的特性与比较
2. Characterization and Device Application of Tensile-Strained Si_(1-y)C_y Layers Grown by Gas-Source Molecular Beam Epitaxy [J] . Katsuya ABE, Chiaki YABE, Tatsuro WATAHIKI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6A期

机译：气源分子束外延生长的拉伸应变Si_（1-y）C_y层的表征及装置应用
3. Characterization of epitaxial Si_(1-y)C_y layers on Si(001) grown by gas-source molecular beam epitaxy [J] . Katsuya Abe, Akira Yamada, Makoto Konagai Journal of Crystal Growth . 2003,第1a4期

机译：气源分子束外延生长在Si（001）上外延Si_（1-y）C_y层的表征
4. TEM characterization of Si_(1-x-y)Ge_xC_y and Si_(1-y)C_y layers grown with molecular beam epitaxy on (001)Si substrates [C] . E Bugiel, S Ruvimov, H J Osten Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：用分子束外延生长的Si_（1-X-Y）Ge_xc_y和Si_（1-y）C_y层的TEM表征在（001）Si基板上
5. Growth optimization and characterization of gallium indium nitride grown by electron cyclotron resonance plasma-assisted molecular beam epitaxy. [D] . Liners, William O. 1995

机译：电子回旋共振等离子体辅助分子束外延生长氮化镓铟的生长优化和表征。
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Characterization of Si/Si1−yCy superlattices grown by surfactant assisted molecular beam epitaxy [O] . P. O. Pettersson 1996

机译：表面活性剂辅助分子束外延生长Si / Si_（1-y）C_y超晶格的表征
8. Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy [R] . Holah, G. D., Meeks, E. L., Eisele, F. L., 1982

机译：用分子束外延生长和表征In（1-x）Ga（x）as（y）p（1-y）和Gaas

Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅