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Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer

机译：具有氮掺杂碳纳米点空穴传输和电子能量传输层的量子点发光二极管

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Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Forster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and - resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.
机译：电致发光效率对于量子点发光二极管（QD-LED）在实际设备中的应用至关重要。我们证明，氮掺杂的碳纳米点（N-CD）中间层可以改善QD-LED的电学和发光性能。 N-CD通过基于溶液的自下而上合成法制备，并作为空穴传输层（HTL）插入到其他多层HTL异质结和红色QD层之间。与没有N-CD夹层的QD-LED相比，具有N-CD夹层的QD-LED具有更高的电整流和电致发光效率。发现N-CD层的插入引起了从N-CD到QD层的福斯特共振能量转移（FRET），如通过时间积分和分辨的光致发光光谱法所证实的。此外，具有N-CD夹层的仅空穴器件（HOD）表现出高的空穴传输能力，紫外光电子能谱也显示N-CD夹层降低了最高的空穴势垒高度。因此，具有足够的空穴载流子传输的更平衡的载流子注入可行地导致具有N-CD夹层的QD-LED的优异的电和电致发光特性。我们进一步研究了N-CD中间层厚度对高亮度QD-LED的电学和发光性能的影响。 N-CD中间层改善QD-LED的电学和发光特性的能力将很容易地被用作新兴的光敏材料，用于高效光电器件。

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