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Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology

机译：由于中子和质子辐照对以深亚微米技术制造的CMOS图像传感器产生的位移破坏效应

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Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.

机译：通过对像素阵列和隔离光电二极管中暗电流行为的分析，提出了由于质子和中子辐照专用于成像的CMOS图像传感器引起的位移损伤效应。研究了平均暗电流增加和暗电流不均匀性。根据GEANT 4计算，将暗电流直方图观察结果与破坏能量分布进行比较。我们还通过退火分析讨论了哪些缺陷可能是CMOS图像传感器中暗电流的原因。

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Virmontois Cédric; Goiffon Vincent; Magnan Pierre; Girard Sylvain; Inguimbert Christophe; Petit Sophie; Rolland Guy; Saint-Pé Olivier;
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年度 2010
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1. Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology [J] . Virmontois C.Goiffon V.Magnan P.Girard S.Inguimbert C.Petit S.Rolland G.Saint-Pe O. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：中子和质子辐射对深亚微米技术制造的CMOS图像传感器产生的位移损伤效应
2. Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor [J] . Zujun Wang, Shaoyan Huang, Minbo Liu, AIP Advances . 2014,第7期

机译：核反应堆中子辐照对CMOS APS图像传感器的位移损伤效应
3. Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation [J] . Fabricio Alcalde Bessia, Martín Pérez, Miguel Sofo Haro, IEEE Transactions on Nuclear Science . 2018,第11期

机译：中子辐照后CMOS图像传感器的位移损坏
4. Degradation of Spectral Response and Dark Current of CMOS Image Sensors in Deep-Submicron Technology due to γ-Irradiation [C] . Padmakumar R. Rao, Xinyang Wang, Albert J. P. Theuwissen European Solid-State Device Research Conference;ESSDERC; 20070911-13;20070911-13; Muenchen(DE);Muenchen(DE) . 2007

机译：γ辐照导致深亚微米技术中CMOS图像传感器的光谱响应和暗电流下降
5. Single event latchup in a deep submicron CMOS technology. [D] . Hutson, John M. 2008

机译：深度亚微米CMOS技术中的单事件闩锁。
6. A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel [O] . Seiji Takahashi, Yi-Min Huang, Jhy-Jyi Sze, 2017

机译：用于亚微米像素的45 nm堆叠式CMOS图像传感器处理技术
7. Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process [O] . Goiffon Vincent, Magnan Pierre, Saint-Pé Olivier, 2009

机译：在深亚微米工艺中制造的质子辐照CMOS传感器中的电离与位移损伤效应

Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology

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