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Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

机译：衬底对金属诱导结晶形成的大晶粒硅薄膜晶体取向的影响

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Producing large-grained polycrystalline Si (poly-Si) film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C) Al-induced crystallization (AIC). The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100) was preferred for Al-doped-ZnO (AZO) and indium-tin-oxide (ITO); (111) was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.
机译：在涂覆有导电层的玻璃基板上生产大晶粒多晶硅（poly-Si）膜对于高效，低成本地制造Si薄膜太阳能电池至关重要。我们研究了导电底层的选择如何影响低温（500°C）铝诱导结晶（AIC）形成的多晶硅层。所得到的多晶硅层的晶体取向强烈地取决于底层材料：（100）对于铝掺杂的ZnO（AZO）和铟锡氧化物（ITO）是优选的； TiN优选（111）。该结果表明Si在底层上异质成核。对于AZO和ITO样品，多晶硅层的平均晶粒尺寸达到近20μm，而对于TiN样品，其平均晶粒尺寸不小于60μm。因此，在AIC中适当地选择底层材料是必不可少的，并且允许在低温下以设定的晶体取向形成大晶粒的Si膜。这些具有大晶粒的高度取向的Si层看来有望用作Si光吸收层以及先进功能材料的种子层。

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