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Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

机译：连续离子层吸附反应法在ZnO上生长的纳米CdS上的带隙和亚带隙光电化学过程

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Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m2g− 1) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Ymax = 90%; 0.1 M Na2S + 0.1 M Na2SO3), but also in the sub-band-gap (SBG) range (Ymax = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (EU) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (EU = 93 mV at SILAR cycle number N = 5), then lowers somewhat (EU = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (EU = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures.
机译：通过连续离子层吸附和反应（SILAR）方法在具有较大比表面积（110±10 m2g-1）的中孔ZnO微片表面上沉积硫化镉纳米颗粒（NP）导致形成ZnO / CdS异质结构不仅在CdS基本吸收区域（Ymax = 90％； 0.1 M Na2S + 0.1 M Na2SO3）内，而且在子带隙（SBG）内均表现出高入射光子-电流转换效率（Y） ）范围（Ymax = 25％）。 SBG光电化学过程的起始电位比带隙（BG）起始电位高100 mV。与BG相比，在沉积的CdS量更大时，可以观察到SBG工艺的最大入射光子-电流转换效率值。由光电流谱确定的CdS NPs的Urbach能量（EU）在早期沉积阶段达到最大值（在SILAR循环数N = 5时EU = 93 mV），然后有所降低（在N = 10时EU = 73 mV）并在N的20至300（EU = 67±1 mV）范围内保持稳定。根据ZnO / CdS异质结构中的光散射，可以解释光电化学SBG工艺的高效率。

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