首页> 外文OA文献 >Bascules à impulsion robustes en technologie 28nm FDSOI pour circuits numériques basse consommation à très large gamme de tension d'alimentation
【2h】

Bascules à impulsion robustes en technologie 28nm FDSOI pour circuits numériques basse consommation à très large gamme de tension d'alimentation

机译:采用28nm FDSOI技术的强大脉冲触发器,适用于具有非常宽电源电压范围的低功耗数字电路

摘要

The explosion market of the mobile application and the paradigm of the Internet of Things lead to a huge demand for energy-efficient systems. To overcome the limit of Moore's law due to bulk technology, a new transistor technology has appeared recently in industrial process: the fully-depleted silicon on insulator, or FDSOI.In modern ASIC designs, a large portion of the total power consumption is due to the leaves of the clock tree: the flip-flops. Therefore, the appropriate flip-flop architecture is a major choice to reach the speed and energy constraints of mobile and ultra-low power applications. After a thorough overview of the literature, the explicit pulse-triggered flip-flop topology is pointed out as a very interesting flip-flop architecture for high-speed and low-power systems. However, it is today only used in high-performances circuits mainly because of its poor robustness at ultra-low voltage.In this work, explicit pulse-triggered flip-flops architecture design is developed and studied in order to improve their robustness and their energy-efficiency. A large comparison of resettable and scannable latch architecture is performed in the energy-delay domain by modifying the sizing of the transistors, both at nominal and ultra-low voltage. Then, it is shown that the back biasing technique allowed by the FDSOI technology provides better energy and delay performances than the sizing methodology. As the pulse generator is the main cause of functional failure, we proposed a new architecture which provides both a good robustness at ultra-low voltage and an energy efficiency. A selected topology of explicit pulse-triggered flip-flop was implemented in a 16x32b register file which exhibits better speed, energy consumption and area performances than a version with master-slave flip-flops, mainly thanks to the sharing of the pulse generator over several latches.
机译:移动应用程序的爆炸性市场和物联网的范式导致对节能系统的巨大需求。为了克服由于块技术带来的摩尔定律的限制,最近在工业过程中出现了一种新的晶体管技术:绝缘体上完全耗尽的硅或FDSOI。在现代ASIC设计中,总功耗的很大一部分是由于时钟树的叶子:触发器。因此,合适的触发器架构是达到移动和超低功耗应用的速度和能量限制的主要选择。在对文献进行彻底的概述之后,明确指出了脉冲触发的触发器拓扑是一种针对高速和低功耗系统的非常有趣的触发器架构。然而,由于其在超低电压下的鲁棒性差,如今它仅用于高性能电路中。在这项工作中,开发并研究了显式脉冲触发的触发器架构设计,以提高其鲁棒性和能量。 -效率。通过在额定电压和超低电压下修改晶体管的尺寸,可以在能量延迟域中对可重置和可扫描锁存器架构进行较大的比较。然后,表明FDSOI技术所允许的反向偏置技术比定尺寸方法具有更好的能量和延迟性能。由于脉冲发生器是功能故障的主要原因,因此我们提出了一种新架构,该架构在超低电压下提供了良好的鲁棒性和能效。在16x32b寄存器文件中实现了显式脉冲触发触发器的选定拓扑,该拓扑比具有主从触发器的版本具有更好的速度,能耗和面积性能,这主要归功于多个脉冲发生器的共享闩锁。

著录项

  • 作者

    Bernard Sébastien;

  • 作者单位
  • 年度 2014
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号