首页> 外文OA文献 >Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors.

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Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors.

机译：在适用于CAD的时标上，首次展示了微波功率FET和MMIC的完全物理的，与时间相关的耦合电热仿真结果。这是通过将功率FET或MMIC中随时间变化的热流的原始分析热阻矩阵模型与晶体管的完全物理电CAD模型相结合来实现的。

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This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metamorphic growth of Al0.67In0.33As/Ga0.66In0.34As HEMT structure on a GaAs substrate. The devices, which are the first reported for Enhancement-Mode Al0.67In0.33As/Ga0.66In0.34As MM-HEMT’s, exhibits good dc and rf performance. Good Schottky characteristics have been obtained (a forward turn-on voltage of 0.9V and a typical reverse gate to drain breakdown voltage of 16 V). The 0.4µm gate length devices have a saturation current of 455 mA/mm at +0.8V gate voltage. Gate current studies, versus gate-to-drain extension have been observed, in the first time, in such as devices, showing gate current issued from impact ionization.

机译：本文介绍了增强模式（E模式）与在GaAs衬底上Al0.67In0.33As / Ga0.66In0.34As HEMT结构的变质生长相结合提供的原始结果。该器件是首次报道增强型Al0.67In0.33As / Ga0.66In0.34As MM-HEMT的器件，具有良好的直流和射频性能。已获得良好的肖特基特性（正向开启电压为0.9V，典型的反向栅极至漏极击穿电压为16 V）。栅极长度为0.4µm的器件在+ 0.8V栅极电压下的饱和电流为455 mA / mm。首次在此类器件中观察到栅极电流与栅极至漏极扩展之间的关系，显示出由碰撞电离产生的栅极电流。

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David S.; Batty W.; Panks A.J.; Johnson R.G.; Snowden C.M.;
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年度 2000
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1. SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation [J] . Boige F., Richardeau F., Lefebvre S., Mathematics and computers in simulation . 2019,第APRa期

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2. Coupled Electrothermal, Electromagnetic, and Physical Modeling of Microwave Power FETs [J] . David Denis, Christopher M. Snowden, Ian C. Hunter IEEE Transactions on Microwave Theory and Techniques . 2006,第6期

机译：微波功率FET的电热，电磁和物理耦合模型
3. Electro-thermal analytical model and simulation of the self-heating effects in multi-finger 4H-SiC power MESFETs [J] . Xiaochuan Deng, Bo Zhang, Zhaoji Li Semiconductor science and technology . 2007,第12期

机译：多指4H-SiC功率MESFET的电热分析模型和自热效应仿真
4. Steady-State and Transient Electro-thermal Simulation of Power Devices and MMICs Based on 3D Physical Thermal Models [C] . J. Ding, D. Linton China-Ireland International Conference on Information and Communications Technologies . 2007

机译：基于3D物理热模型的功率器件和MMICS的稳态和瞬态电热模拟
5. Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors. [O] . David S., Batty W., Panks A.J., 2000

机译：在适用于CAD的时标上，首次展示了微波功率FET和MMIC的完全物理的，与时间相关的耦合电热仿真结果。这是通过将功率FET或MMIC中随时间变化的热流的原始分析热阻矩阵模型与晶体管的完全物理电CAD模型相结合来实现的。

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