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首页> 外文OA文献 >Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition
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Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition

机译：氧分压对脉冲激光沉积在（LaAlO3）0.3（Sr2AlTaO6）0.35（001）上生长的Ba（Zr0.3Ti0.7）O3薄膜的结构和介电性能的影响

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摘要

Epitaxial Ba(Zr0.3Ti0.7)O3 thin films were grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) single-crystal substrates by pulsed laser deposition at 700 °C in different oxygen partial pressures ranging from 6.7 Pa to 40.0 Pa. A strong correlation is observed between the structure and dielectric properties for the Ba(Zr0.3Ti0.7)O3 thin films. The tetragonal distortion (ratio of in-plane and out-of-plane lattice parameter, a/c) of the films depends on the oxygen partial pressures. a/c varies from 0.989 at 6.7 Pa to 1.010 at 40.0 Pa, indicating the in-plain strain changes from compressive to tensile. The in-plain strain (either compressive or tensile) shifts the Curie temperature of the Ba(Zr0.3Ti0.7)O3 thin films dramatically. Surface morphology and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films have a strong dependence of the oxygen partial pressure. The film grown 26.7 Pa, which corresponds to a moderate in-plain tensile strain and a Curie temperature of ~ 30 °C, shows the largest relative permittivity, tunability and the best figure of merit in a broad frequency range (1 kHz-500 MHz), which may be a promising candidate for room-temperature microwave device applications.
机译：外延Ba（Zr0.3Ti0.7）O3薄膜通过（LaAlO3）0.3（Sr2AlTaO6）0.35（001）单晶衬底在700°C的脉冲氧沉积中在6.7Pa至40.0Pa的不同氧分压下生长。观察到Ba（Zr0.3Ti0.7）O3薄膜的结构与介电性能之间存在很强的相关性。薄膜的四方畸变（平面内和平面外晶格参数之比，a / c）取决于氧分压。 a / c从6.7Pa时的0.989到40.0Pa时的1.010不等，表明平原应变从压缩到拉伸变化。平面内应变（压缩或拉伸）会极大地改变Ba（Zr0.3Ti0.7）O3薄膜的居里温度。 Ba（Zr0.3Ti0.7）O3薄膜的表面形态和介电性能与氧分压有很强的依赖性。该膜长26.7 Pa，对应中等的拉伸强度和居里温度约30°C，在较宽的频率范围（1 kHz-500 MHz）中显示出最大的相对介电常数，可调性和最佳品质因数），这可能是室温微波设备应用的有希望的候选者。

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