A dual-polarized microstrip antenna with high-isolation is proposed by the utilization of the substrate-integrated waveguide (SIW) technology. According to the SIW technology, the metalized holes (MHs) are inserted into the substrate for the proposed antenna and the electric fields of the feeding parts are enclosed, so the isolation of the antenna is enhanced. The bandwidth is improved due to the MHs in the four sides of the antenna. A prototype of the proposed antenna has been fabricated and measured. Experimental results indicate that the antenna obtains the isolation more than 40 dB and achieves the impedance bandwidth of 21.9% and 23.8%(11.8-14.6 GHz and 11.65-14.8 GHz for two ports) of the reflection coefficients less than -20 dB. The cross polarization with the main lobe remains less than -30 dB and the half-power beam width is about 70° for the proposed antenna. Meanwhile, the front-to-back ratio remains to be better than 20 dB. A good agreement between the measured and simulated results validates the proposed design.
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