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Determining Curie temperatures in dilute ferromagnetic semiconductors: high Curie temperature (Ga,Mn)As

机译:确定稀铁磁半导体中的居里温度:高居里温度(Ga,Mn)As

摘要

In this paper, we use simultaneous magnetometry and electrical transport measurements to critically examine ways in which the Curie temperature (TC) values have been determined in studies of dilute magnetic semiconductors. We show that, in sufficiently homogeneous samples, TC can be accurately determined from remanent magnetization and magnetic susceptibility and from the positions of the peak in the temperature derivative of the resistivity. We also show that the peak of the resistivity does not occur at TC, as illustrated by a (Ga,Mn)As sample for which the peak of the resistivity is at 21361K when TC is only 17861K
机译:在本文中,我们使用同步磁力测量和电传输测量来严格检查稀磁半导体研究中确定居里温度(TC)值的方式。我们表明,在足够均匀的样品中,可以根据剩余磁化强度和磁化率以及电阻率温度导数中峰的位置来精确确定TC。我们还表明,电阻率的峰值不会在TC处出现,如(Ga,Mn)As样品所示,当TC仅为17861K时,电阻率的峰值为21361K

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