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Microwave-pumped semiconductor-superlattice parametric oscillator: a new subterahertz and terahertz radiation source

机译:微波泵浦半导体超晶格参量振荡器:新的太赫兹和太赫兹辐射源

摘要

The superlattice parametric oscillator (SPO) is described. The research on the SPO comprised an experimental and a theoretical part. The SPO is pumped with microwave radiation and oscillates at the third harmonic frequency of the pump frequency. A semiconductor superlattice acts as active element giving rise to parametric gain for third harmonic radiation. A resonator delivers the feedback necessary for parametric oscillation. The SPO works at room temperature. We realized the SPO in a metal waveguide technique. When pumped with radiation of a frequency near 100 GHz it generated third harmonic radiation near 300 GHz. It was tunable over a broad frequency range. The SPO showed characteristic behavior of an oscillator. The power (0.1 mW) of the third harmonic radiation corresponded to a conversion efficiency of a few percent of the power (4 mW)udof the pump radiation. Parametric gain is based on miniband electron transport in a superlattice. A theoretical analysis shows that gain can occur also at terahertz (THz) frequencies. Terahertz gain should allow it to realize a terahertz-SPO.
机译:描述了超晶格参量振荡器(SPO)。对SPO的研究包括实验和理论部分。 SPO被微波辐射泵浦,并以泵浦频率的三次谐波频率振荡。半导体超晶格用作有源元件,从而产生三次谐波辐射的参数增益。谐振器提供参数振荡所需的反馈。 SPO在室温下工作。我们通过金属波导技术实现了SPO。当泵浦频率接近100 GHz的辐射时,它会产生300 GHz附近的三次谐波辐射。它在很宽的频率范围内可调。 SPO显示出振荡器的特征行为。三次谐波辐射的功率(0.1 mW)对应于泵浦辐射功率(4 mW) ud的百分之几的转换效率。参数增益基于超晶格中的微带电子传输。理论分析表明,增益也可以在太赫兹(THz)频率下出现。太赫兹增益应使其实现太赫兹SPO。

著录项

  • 作者

    Stahl Benjamin Ingo;

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  • 年度 2008
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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