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Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison

机译：通过扩展的双镶嵌方法实现多孔超低k材料集成：CMP之前/之后的固化比较

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Calvo Jesús; Koch Johannes; Thrun Xaver; Seidel Robert; Uhlig Benjamin;
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年度 2016
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1. Evaluating k-values for low-k materials after damascene integration: Method and results [J] . B. Vereecke, M. Pantouvaki, I. Ciofi, Microelectronic Engineering . 2011,第5期

机译：镶嵌集成后评估低k材料的k值：方法和结果
2. Interface integration defect of copper and low-K materials beyond nano-scale copper damascene process [J] . Chen KW, Wang YL, Tsao JC, The journal of physics and chemistry of solids . 2008,第2a3期

机译：铜和低K材料的界面集成缺陷超越了纳米铜镶嵌工艺
3. Integration of Self-Assembled Porous Silica in Low-k/Cu Damascene Interconnects [J] . Shinichi Chikaki, Masashi Shimoyama, Ryotaro Yagi, Applied physics express . 2009,第10期

机译：自组装多孔二氧化硅在低k / Cu镶嵌互连中的集成
4. Single and dual damascene integration of a spin-on porous ultra low-k material [C] . Mosig K., Jacobs T., Kofron P., Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International . 2001

机译：旋转多孔超低k材料的单镶嵌和双镶嵌集成
5. The effect of ultra-violet light curing on the molecular structure and fracture properties of an ultra low-k material [D] . Smith, Ryan Scott 2007

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6. From Molecules to Porous Materials: Integrating DiscreteElectrocatalytic Active Sites into Extended Frameworks [O] . Soumyodip Banerjee, §, Rasha I. Anayah, 2020

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7. Aqueous Based Single Wafer Cu/Low-k Cleaning Process Characterization and Integration into Dual Damascene Process Flow [O] . Jianshe Tang, Brian J. Brown, Steven Verhaverbeke, 2015

机译：水基单晶硅Cu / Low-k清洗工艺表征与双镶嵌工艺流程的集成

Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison

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