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Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy

机译：基于等离子体辅助分子束外延生长的InGaN量子点的蓝绿红LED

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Tao Xu; A. Yu Nikiforov; Ryan France; Christos Thomidis; Adrian Williams; T. D. Moustakas;
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年度 2007
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1. Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy [J] . Tao Xu, A. Yu Nikiforov, Ryan France, Physica Status Solidi. A, Applications and Materials Science . 2007,第6期

机译：基于通过等离子体辅助分子束外延生长的InGaN量子点的蓝绿色红色LED
2. Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes [J] . Baranowski Michal, Kudrawiec Robert, Misiewicz Jan, Physica status solidi, B. Basic research . 2015,第5期

机译：等离子体辅助分子束外延生长的InGaN / InGaN量子阱的光致发光特性：氮和镓通量的影响
3. Self-assembled InN quantum dots grown on AlN/Si(111) and GaN/Al_2O_3(0001) by plasma-assisted molecular-beam epitaxy under Stranski-Krastanow mode [J] . C.-H. Shen, H.-W. Lin, H.-M. Lee, Thin Solid Films . 2006,第1a2期

机译：在Stranski-Krastanow模式下通过等离子体辅助分子束外延在AlN / Si（111）和GaN / Al_2O_3（0001）上生长的自组装InN量子点
4. Green light emitting diodes with high internal quantum efficiency InGaN/GaN self-organized quantum dots grown by RF-Plasma Assisted Molecular Beam Epitaxy [C] . Zhang, Meng, Guo, Wei, Banerjee, Animesh, CLEO;Conference on Lasers and Electro-Optics;Quantum Electronics and Laser Science Conference;QELS . 2010

机译：内部高量子效率的绿色发光二极管通过射频等离子体辅助分子束外延生长的InGaN / GaN自组织量子点
5. LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy. [D] . Xu, Tao. 2007

机译：基于III型氮化物量子点和分子束外延生长的量子阱的LED。
6. Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy [O] . Marcel S. Claro, Ido Levy, Abhinandan Gangopadhyay, -1

机译：分子束外延生长的自组装硒化铋（Bi2Se3）量子点
7. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy [O] . Gacevic Zarko, Das A., Teubert J., 2011

机译：等离子体辅助分子束外延生长的III族氮化物量子点超晶格的内部量子效率

Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy

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