Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.
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机译：对于光电子和太阳能电池应用，要求从多孔硅（PSi）获得有效的可见光致发光。改善PSi的吸收和发射特性具有挑战性。报道了在n型（111）硅（Si）晶圆上进行光化学蚀刻辅助的PSi层的形成。在10、15、20、25和30分钟的变化蚀刻时间下，以恒定电流密度（〜30 mA / cm2）制备样品。考察了蚀刻时间对生长形态和光谱特性的影响。进行室温光致发光（PL）测量以确定合成样品的光学性质。样品形态通过扫描电子显微镜（SEM）和原子力显微镜（AFM）成像。使用重量分析法估算所制备样品的厚度和孔隙率。发射和吸收数据还用于确定样品的带隙和电子结构性质。结果和分析，用不同的机制解释并比较。
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