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Investigation of novel semiconductor heterostructure systems : I: cerium oxide/silicon heterostructures. II: 6.1 °A semiconductor-based avalanche photodiodes

机译：研究新型半导体异质结构系统：I：氧化铈/硅异质结构。 II：6.1°基于半导体的雪崩光电二极管

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The work presented in this thesis concerns the development of two different semiconductor heterostructure technologies.ududPart I describes research in the CeO2/silicon heterostructure system. Details are presented concerning the growth of CeO2 on silicon and the reactions that take place at the CeO2/silicon interface. The evolution of this interface as a function of annealing temperature and annealing ambient are studied via in situ x-ray photoelectron spectroscopy (XPS). Studies of metal-CeO2-silicon capacitors are also presented which help to determine the usefulness of this oxide as an alternative gate dielectric for silicon-based device applications.ududPart II involves research into the fabrication of avalanche photodiodes (APD's) utilizing the 6.1 A semiconductor system. Certain alloys of Al_xGa_(1-x)Sb are shown to greatly favor hole multiplication which is beneficial for both noise characteristics and gain-bandwidth product. Further, details are presented on the current investigation into using 6.1 A superlattices to acheive even more desirable detector performance.

机译：本文提出的工作涉及两种不同的半导体异质结构技术的发展。 ud ud第一部分描述了CeO2 /硅异质结构系统的研究。详细介绍了硅上CeO2的生长以及在CeO2 /硅界面上发生的反应。通过原位X射线光电子能谱（XPS）研究了该界面随退火温度和退火环境的变化。还介绍了金属CeO2-硅电容器的研究，这些研究有助于确定该氧化物作为硅基器件应用的替代栅极电介质的有用性。 ud ud第二部分涉及对利用CeO2-硅电容器制造雪崩光电二极管（APD）的研究。 6.1半导体系统。某些Al_xGa_（1-x）Sb合金显示出极大地促进了空穴倍增，这有利于噪声特性和增益带宽积。此外，还提供了有关使用6.1 A超晶格实现甚至更理想的检测器性能的当前研究的详细信息。

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Preisler Edward James;
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年度 2003
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机译：新型半导体异质结构系统的研究：I.氧化铈/硅异质结构II。 6.1基于半导体的雪崩光电二极管。
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Investigation of novel semiconductor heterostructure systems : I: cerium oxide/silicon heterostructures. II: 6.1 °A semiconductor-based avalanche photodiodes

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