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Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

机译：用正电子寿命谱研究n型6H-siC的等时退火研究

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n-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 °C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 °C.

机译：已使用正电子寿命光谱研究了等温退火温度为400、650、900、1200和1400°C的n型6H碳化硅。在成长的样本中，我们确定了VSi空位，VCVSi空位以及可能的VC空位。发现硅空位和碳空位在400-650℃的温度范围内退火。发现VCVSi空位在1400℃的退火温度下持续。

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作者
Fung S; Beling CD; Ling CC;
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年度 2000
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1. Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy [J] . Ling CC., Fung S., Beling CD. Physical Review, B. Condensed Matter . 2000,第12期

机译：正电子寿命谱法研究n型6H-SiC的等时退火
2. Positron Annihilation Lifetime (PAL) Studies of the Variations of Microstructure During Isochronal Annealing of Cu-Zn (60/40) Alloy [J] . Alia S. Taha, Noora A. El Kahtany Journal of Materials Engineering and Performance . 2002,第3期

机译：Cu-Zn（60/40）合金等时退火过程中微结构变化的正电子An没寿命（PAL）研究
3. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies [J] . Mohammad A. Mannan, Khai V. Nguyen, Rahmi O. Pak, IEEE Transactions on Nuclear Science . 2016,第2期

机译：深层瞬态光谱和等时退火研究研究n型4H-碳化硅外延层的深层
4. Isochronal annealing on n-type 4H-SiC epitaxial schottky barriers and investigation of defect levels by deep level transient spectroscopy [C] . Mohammad A. Mannan, Khai V. Nguyen, Krishna C. Mandal IEEE Nuclear Science Symposium and Medical Imaging Conference . 2014

机译：n型4H-SiC外延肖特基势垒的等时退火和深能级瞬态光谱研究缺陷能级
5. Surface modification of 6H-silicon carbide under vacuum annealing studied by time of flight positron annihilation induced auger electron spectroscopy . [D] . Mukherjee, Saurabh. 2007

机译：飞行时间正电子an灭诱导的俄歇电子能谱研究了真空退火下6H-碳化硅的表面改性。
6. Structural study of polymer hydrogel contact lenses by means of positron annihilation lifetime spectroscopy and UV–vis–NIR methods [O] . J. Filipecki, A. Kocela, P. Korzekwa, -1

机译：正电子an没寿命光谱法和UV-vis-NIR方法研究聚合物水凝胶隐形眼镜的结构
7. Au/GaAs interface annealing study by positron-lifetime spectroscopy [O] . Wang YY, Fung S, Shan YY, 1995

机译：用正电子寿命谱研究au / Gaas界面退火研究
8. Annealing of Cold Worked Hypostoichiometric Ni sub 3 Al Alloys Using Positron Lifetime Spectroscopy [R] . Usmar, S. G., Lynn, K. G. 1986

机译：用正电子寿命光谱法退火冷加工的次化学计量Ni 3 al合金

Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

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