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Mechanical property analyses of porous low-dielectric-constant films for stability evaluation of multilevel-interconnect structures

机译：多孔低介电常数薄膜的力学性能分析，用于多层互连结构的稳定性评估

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摘要

[[abstract]]The mechanical properties of porous low-dielectric-constant (low-k) thin films have been investigated for the stability evaluation of multilevel-interconnect structures using nanoindentation, microscratch, and four-point bending tests. Stress-strain curves of these films are proposed to predict their strengths and to explain their deformation behaviors. Real stress-strain behaviors are analyzed and confirmed by combining the experimental data obtained from nanoindentation and microscratch tests. Soft low-k films exhibit large plastic deformation, while hard and brittle films fracture early. The interfacial adhesion strengths and delamination behaviors between thin-film layers have been also studied using microscratch and four-point bending tests. The mechanical failure of interconnect structures depends on the inferiority of film strength or interfacial adhesion.
机译：[[摘要]]已使用纳米压痕，微划痕和四点弯曲试验研究了多孔低介电常数（low-k）薄膜的机械性能，以评估多层互连结构的稳定性。提出了这些膜的应力-应变曲线，以预测其强度并解释其变形行为。通过结合从纳米压痕和微划痕测试获得的实验数据，分析并确认了真实的应力应变行为。柔软的低k膜表现出较大的塑性变形，而硬而脆的膜则较早断裂。还使用微划痕和四点弯曲试验研究了薄膜层之间的界面粘合强度和分层行为。互连结构的机械故障取决于膜强度或界面粘合性的劣势。

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    Chang Shou-Yi;

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  • 年度 2011
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  • 正文语种 [[iso]]en
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