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Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures

机译：微波等离子体余辉氧化在低温下生长的氟化和N2O等离子体退火的超薄氧化硅的基本电性能

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摘要

[[abstract]]A technique for growing ultrathin silicon oxides of superior quality at low temperatures is indispensable for future submicron device applications. Fundamental characteristics such as the oxide breakdown fields, oxide charges, and interface-state densities of various ultrathin silicon oxides (less than or equal to 8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 and 600 degrees C) were investigated. Fluorination (HF soaking) and low-temperature N2O plasma annealing were employed to improve the properties of the oxides. The breakdown fields of the as-grown silicon oxides were enhanced and the interface-state densities were reduced. The effect of N2O annealing time on the interface-state density was also investigated. A longer annealing time (>1 h) was required to reduce the interface-state density. The effective oxide charge density of 600 degrees C as-grown oxide was as low as 6x10(10) cm(-2). Additionally, the breakdown field of the thin silicon oxide grown at 600 degrees C with 15 min N2O plasma annealing was 12 MV/cm.
机译：[[摘要]]在未来的亚微米器件应用中，必不可少的技术是在低温下生长优质的超薄氧化硅。研究了在低温（400和600摄氏度）下通过微波等离子体余辉氧化生长的各种超薄氧化硅（小于或等于8 nm）的基本特性，例如氧化物击穿场，氧化物电荷和界面态密度。氟化（HF浸泡）和低温N2O等离子体退火被用来改善氧化物的性能。增强了生长态氧化硅的击穿场，降低了界面态密度。还研究了N2O退火时间对界面态密度的影响。需要更长的退火时间（> 1小时）以降低界面态密度。生长的600摄氏度氧化物的有效氧化物电荷密度低至6x10（10）cm（-2）。另外，在15分钟的N2O等离子体退火下于600摄氏度下生长的薄氧化硅的击穿场为12 MV / cm。

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    Chen P.C.;

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  • 年度 2012
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  • 正文语种 [[iso]]en
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