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Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material

机译：InGaas / InGaasp mQW材料中线宽增强因子的偏振依赖性

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Measurements and calculations on the differential gain, the differential refractive index, and the linewidth enhancement factor have been performed for unstrained quantum-well (QW) material. The differential refractive index is considerably lower for the transverse magnetic (TM) polarization than for the transverse electric (TE) polarization, which is ascribed to absence of the plasma effect for the TM polarization. This has implications for the linewidth enhancement factor and thus linewidth and chirp in QW lasers

机译：已对无应变量子阱（QW）材料执行了差分增益，差分折射率和线宽增强因子的测量和计算。横向磁（TM）极化的差分折射率比横向电（TE）极化的差分折射率低得多，这归因于TM极化没有等离子体效应。这将影响线宽增强因子，进而影响QW激光器的线宽和线性调频

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Jepsen Kim Stokholm; Storkfelt Niels; Vaa Michael; Stubkjær Kristian;
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年度 1994
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正文语种 eng
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专利

1. Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering [J] . ZHAO Jie, WANG Yong-chen, FENG Zhe-chuan, 半导体光子学与技术（英文版） . 2004,第002期
2. Transient Thermal Analysis of Ridge Waveguide InAsP/InGaAsP MQW Lasers Operating in Pulse Driving Conditions [J] . HE You-jun, ZHANG Yong-gang, LI Ai-zhen 半导体光子学与技术（英文版） . 2003,第004期
3. Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material [J] . Jepsen K.S., Storkfelt N. IEEE Journal of Quantum Electronics . 1994,第3期

机译：InGaAs / InGaAsP MQW材料中线宽增强因子的偏振依赖性
4. Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers [J] . Shimizu J., Yamada H. IEEE Photonics Technology Letters . 1991,第9期

机译：1.55μmInGaAs / InGaAsP MQW和应变MQW激光器的K因子，差分增益和非线性增益系数对光约束因子的依赖性
5. Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers [J] . Aoki M., Uomi K. Electronics Letters . 1990,第22期

机译：InGaAs / InGaAsP MQWλ/ 4位移DFB激光器中增强的弛豫振荡频率和降低的非线性K因子
6. Polarization dependent a-factor in InGaAs/InGaAsP MQW material [C] . Soerensen, M., Storkfelt, . 1992

机译：InGaAs / InGaAsP MQW材料中与极化有关的a因子
7. Epitaxial structure dependence of gain, refractive index, and linewidth enhancement factor in gallium arsenide and indium gallium arsenide broad-area quantum well lasers. [D] . Stohs, Jonathan. 2000

机译：砷化镓和砷化铟镓广域量子阱激光器中增益，折射率和线宽增强因子的外延结构依赖性。
8. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
9. Polarization dependent a-factor in InGaAs/InGaAsP MQW material [O] . Sørensen M., Storkfelt Niels, Jepsen Kim Stokholm, 1992

机译：InGaas / InGaasp mQW材料中的偏振相关因子
10. Design and Implementation of High Power Pulse Operation Broadened Waveguide 1.5 mum InGaAsP/InP MQW Lasers [R] . Belenky, G. 2001

机译：高功率脉冲操作加宽波导1.5 m InGaasp / Inp mQW激光器的设计与实现

Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material

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