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DISPOSITIF DE MÉMOIRE NON VOLATILE, DISPOSITIF DE MÉMORISATION COMPRENANT UN DISPOSITIF DE MÉMOIRE NON VOLATILE ET PROCÉDÉ D'ACCÈS À UN DISPOSITIF DE MÉMOIRE NON VOLATILE
DISPOSITIF DE MÉMOIRE NON VOLATILE, DISPOSITIF DE MÉMORISATION COMPRENANT UN DISPOSITIF DE MÉMOIRE NON VOLATILE ET PROCÉDÉ D'ACCÈS À UN DISPOSITIF DE MÉMOIRE NON VOLATILE
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摘要
A nonvolatile memory device includes a memory cell array that includes memory blocks, wherein each of the memory blocks includes pages each including memory cells, a row decoder circuit that selects one of the pages from a selected memory block of the memory blocks in a write operation and selects memory cells of a close unit from the selected memory block in a close operation, and a page buffer circuit that writes data into memory cells of a page selected by the row decoder circuit in the write operation and writes dummy data into the memory cells of the close unit selected by the row decoder circuit in the close operation. The close unit includes one or more pages, and, in the close operation, the row decoder circuit adjusts a size of the close unit.
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