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DÉCOUPLAGE ENTRE TOPOLOGIE DE LIGNE DE SOURCE ET PLACEMENT DE CONTACT DE TRANSISTOR D'ACCÈS DANS UNE CELLULE BINAIRE DE MÉMOIRE À JONCTION TUNNEL MAGNÉTIQUE POUR FACILITER UNE RÉDUCTION DE LA RÉSISTANCE DE CONTACT
DÉCOUPLAGE ENTRE TOPOLOGIE DE LIGNE DE SOURCE ET PLACEMENT DE CONTACT DE TRANSISTOR D'ACCÈS DANS UNE CELLULE BINAIRE DE MÉMOIRE À JONCTION TUNNEL MAGNÉTIQUE POUR FACILITER UNE RÉDUCTION DE LA RÉSISTANCE DE CONTACT
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摘要
Magnetic tunnel junction (MTJ) memory bit cells that decouple source line layout from access transistor node size to facilitate reduced contact resistance are disclosed. In one example, an MTJ memory bit cell is provided that includes a source plate disposed above and in contact with a source contact for a source node of an access transistor. A source line is disposed above and in electrical contact with the source plate to electrically connect the source line to the source node. The source plate allows the source line to be provided in a higher metal level from the source and drain contacts of the access transistor such that the source line is not in physical contact with (i.e., decoupled from) the source contact. This allows pitch between the source line and drain column to be relaxed from the width of the source and drain nodes without having to increase contact resistance.
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