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Ti3AlC2 Ti3AlC2 Preparation method of Ti3AlC2 tape and the joining method of silicon carbide using the same
Ti3AlC2 Ti3AlC2 Preparation method of Ti3AlC2 tape and the joining method of silicon carbide using the same
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机译：Ti3AlC2 Ti3AlC2 Ti3AlC2带的制备方法以及使用该带的碳化硅接合方法
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摘要
The invention bonded re-dissolved Ti 3 AlC 2, a tape preparation and the bond re-dissolved Ti 3 AlC relates to a bonding method of silicon carbide using a second tape, from the room temperature when using the bonded damper Ti 3 AlC 2 tape prepared by the method of the present invention according to Bonding silicon carbide (SiC) mono- or silicon carbide fiber-reinforced silicon carbide composites (SiC f / SiC), which can be used at high temperatures of 1500 o C, is realized in an atmosphere free of oxygen, resulting in high-temperature structural and reactor structural materials. As a result, the joint can be implemented. In addition, the joining uniformity can be improved by using the Ti 3 AlC 2 tape for joining materials produced by the method according to the present invention for joining complex shapes. In addition, by maintaining a long time at high temperature, the Ti 3 AlC 2 tape for bonding material is diffused into the bonding material of silicon carbide (SiC) to provide a bonding method in which the bonding material is not present, thereby preventing the deterioration of characteristics due to the presence of the bonding material as foreign matter. Silicon carbide (SiC) base material can be utilized.
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机译：本发明的粘结再溶解的Ti 3 AlC 2 胶带的制备方法，粘结再溶解的Ti 3 AlC涉及一种粘结方法。使用通过本发明方法制备的粘结阻尼器Ti 3 AlC 2 胶带从室温开始使用 second 胶带的碳化硅根据结合碳化硅（SiC）单或碳化硅纤维增强的碳化硅复合材料（SiC f / SiC）的规定，可在1500 o 的高温下使用在无氧的气氛中实现C 1，产生高温结构和反应器结构材料。结果，可以实现接合。另外，通过使用Ti 3 AlC 2 带材来提高接合均匀性，所述带材用于接合根据本发明的用于接合复杂形状的方法的材料。此外，通过长时间保持高温，将用于粘结材料的Ti 3 AlC 2 带材扩散到碳化硅（SiC）的粘结材料中，从而形成其中不存在粘结材料的粘结方法，从而防止由于粘结材料作为异物的存在而导致的特性劣化。可以使用碳化硅（SiC）基材。
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