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HVPE -Ga2O3 MANUFACTURING METHOD OF -Ga2O3 THIN FILM USING HALIDE VAPOR PHASE EPITAXY GROWTH
HVPE -Ga2O3 MANUFACTURING METHOD OF -Ga2O3 THIN FILM USING HALIDE VAPOR PHASE EPITAXY GROWTH
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机译：卤化物气相相表观生长法制备-Ga2O3薄膜的HVPE-Ga2O3方法
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摘要
Disclosed is a method for producing α-Ga 2 O 3 thin film using HVPE growth method, which has high breakdown voltage, high-quality epi growth, production of large size substrates, and high yield and low production cost. do. Α-Ga 2 O 3 thin film manufacturing method using the HVPE growth method according to the present invention comprises the steps of (a) etching the surface of the substrate; And (b) depositing and pretreating GaCl on the substrate; And (c) forming the α-Ga 2 O 3 thin film by depositing the pretreated substrate under a source temperature of 450 to 650 ° C. and a growth temperature of 450 to 500 ° C. while exposing the pretreated substrate to an N 2 gas atmosphere. It is characterized by including.
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机译：公开了一种利用HVPE生长法制备α-Ga 2 O 3 薄膜的方法，该方法具有高击穿电压，高质量的外延生长，大尺寸基板的生产，产量高，生产成本低。做。使用根据本发明的HVPE生长方法的Al-Ga 2 O 3 薄膜的制造方法包括以下步骤：（a）蚀刻衬底的表面; （b）在衬底上沉积和预处理GaCl;并且（c）通过在450至650℃的源温度和450℃的生长温度下沉积预处理的衬底来形成α-Ga 2 O 3 薄膜。将预处理的基材暴露在N 2 气氛中，同时加热至500°C。它的特点是包括。
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